单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

An Antibacterial Nonenzymatic Glucose Sensor Composed of Carbon Nanotubes Decorated with Silver Nanoparticles

A glucose sensor composed of silver nanoparticles decorated carbon nanotubes (Ag‐NPs/CNTs) prepared by ion implantation is described. Ag‐NPs with size of 2–4 nm are uniformly distributed in the CNTs after ion implantation. This process provides a strong combination between Ag‐NPs and CNTs and can effectively prevent the Ag‐NPs from aggregation. A linear range of 125 µM to 10 mM towards glucose determination was obtained. The Ag‐NPs/CNTs electrode shows minimal interferences from co‐existence species such as uric acid and ascorbic acid and an antibacterial rate of 94 % towards E. coli.     

Electrochemical properties of niobium and phosphate doped spherical Li-rich spinel LiMn2O4 synthesized by ion implantation method

Spherical Li-rich lithium manganese oxide(LMO) spinel material was synthesized by an ion implanted method assisted by polyalcohol doped with Niobium and Phosphate simultaneously.The material was characterized by scanning electron microscopy,X-ray diffraction and BET specific surface area analysis.The electrochemical performances were investigated with galvanostatic techniques and cyclic voltammetry.The synthesis process was investigated with TG/DSC.The results show that the lithium ion can be immersed into the pore of manganese dioxide at a low temperature with the ion implanted method.The prepared materials have a higher discharge capacity and better crystallization than those prepared by solid phase method.The doped Nb can improve the capacity of the Li-rich LMO spinel and reinforce the crystal growth along(111) and(400) planes.The crystal grains show circular and smooth morphology,which makes the specific surface area greatly decreased.Phosphate-doped LMO spinel exhibits good high-rate capacity and structure stability.The prepared Li_(1.09)Mn_(1.87)Nb_(0.031)O_(3.99)(PO_4)_(0.021)delivers a discharge capacity of 119mAhg~(-1) at 0.2C(1C=148mAg~(-1)) and 112.8 mAhg~(-1) at 10 C,the discharge capacity retention reaches 98% at 1 ℃ after 50 cycles at 25 ℃ and 94% at 55 ℃.     

Effect of Nb,Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Silicon carbide is considered as a bio-inert semiconductor material; consequently, it has been proposed for potential applications in human body implantation. In this study, we study the effect of implanting different metal ions on the surface properties of silicon carbide single crystal. The valence states of the elements and the surface roughness of implanted SiC were studied using X-ray photoelectron spectroscopy and atomic force microscope, respectively. Osteoblastic MG-63 cells were utilized to characterize the cytocompatibility of ion implanted SiC. The results show that after Nb ion implantation on the SiC surface, it mainly exists in the form of Nb–C bond, Nb–O bond, and a small amount of metallic niobium. The titanium implanted on SiC primarily forms Ti-C bond and Ti-O bond. The tungsten implanted on SiC mostly presents as metallic tungsten and W–O bond. The roughness of silicon carbide single crystal is improved by ion implantation of all three metal ions. Ion implantation of titanium and niobium can improve the cell compatibility and hydrophilicity of silicon carbide, whereas ion implantation of tungsten reduces the cell compatibility and hydrophilicity of silicon carbide.     

Optical spectroscopy study of damage evolution in 6H-SiC by H_2~+ implantation

Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.     

Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

Radiation damage and annealing in Sb implanted diamond

The predicted, but as yet unobserved, intradonor absorption spectrum of the hydrogenic-like donors in CdF₂ crystals is presented. The role of phonon coupling in these spectra is discussed. From the data on the insulator-semiconductor transition in CdPbF₂ it is concluded that the dominant factor in convertibility of CdF₂ to a semiconducting state is its electron affinity, the largest among the fluorites (x≈4 eV).     

Reflection of keV heavy-ion beams from solid targets. Dependence on energy and angle of incidence

Recent experimental and theoretical studies of the reflection of keV heavy-ion beams have been extended to higher energies and to non-perpendicular incidence. The reflection coefficient for Na⁺ and K⁺ ions backscattered from polycrystalline gold and silver targets has been obtained for perpendicular incidence at energies of 100–500 keV. The dependence on angle of incidence has been investigated at 30 keV for the same combinations of targets and projectiles. Effects of electronic stopping have been included in the theoretical calculations. Good agreement between the experimental results and the theoretical calculations is found.